Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration

Yu San Chien; Yan Pin Huang; Ruoh Ning Tzeng; Ming Shaw Shy; Teu Hua Lin; Kou Hua Chen; Chi Tsung Chiu; Ching Te Chuang; Wei Hwang; Jin-Chern Chiou; Ho Ming Tong; Kuan-Neng Chen

doi:10.1109/TED.2014.2304778

Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration

Yu San Chien, Yan Pin Huang, Ruoh Ning Tzeng, Ming Shaw Shy, Teu Hua Lin, Kou Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu₂In and Cu ₇In₃ phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3× 10-⁸ Ω-cm². In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.

Original language	English
Article number	6744574
Pages (from-to)	1131-1136
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	4
DOIs	https://doi.org/10.1109/TED.2014.2304778
State	Published - 1 Jan 2014

Keywords

3-D integration
Cu/In bonding
Interconnect.

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10.1109/TED.2014.2304778

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Chien, Y. S., Huang, Y. P., Tzeng, R. N., Shy, M. S., Lin, T. H., Chen, K. H., Chiu, C. T., Chuang, C. T., Hwang, W., Chiou, J.-C., Tong, H. M., & Chen, K.-N. (2014). Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration. IEEE Transactions on Electron Devices, 61(4), 1131-1136. Article 6744574. https://doi.org/10.1109/TED.2014.2304778

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title = "Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration",

abstract = "Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu 7In3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3× 10-8 Ω-cm2. In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.",

keywords = "3-D integration, Cu/In bonding, Interconnect.",

author = "Chien, {Yu San} and Huang, {Yan Pin} and Tzeng, {Ruoh Ning} and Shy, {Ming Shaw} and Lin, {Teu Hua} and Chen, {Kou Hua} and Chiu, {Chi Tsung} and Chuang, {Ching Te} and Wei Hwang and Jin-Chern Chiou and Tong, {Ho Ming} and Kuan-Neng Chen",

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doi = "10.1109/TED.2014.2304778",

language = "English",

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T1 - Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration

AU - Chien, Yu San

AU - Huang, Yan Pin

AU - Tzeng, Ruoh Ning

AU - Shy, Ming Shaw

AU - Lin, Teu Hua

AU - Chen, Kou Hua

AU - Chiu, Chi Tsung

AU - Chuang, Ching Te

AU - Hwang, Wei

AU - Chiou, Jin-Chern

AU - Tong, Ho Ming

AU - Chen, Kuan-Neng

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu 7In3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3× 10-8 Ω-cm2. In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.

AB - Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu 7In3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3× 10-8 Ω-cm2. In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.

KW - 3-D integration

KW - Cu/In bonding

KW - Interconnect.

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ER -

Low-temperature bonded Cu/In interconnect with high thermal stability for 3-D integration

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