Low temperature annealing with solid-state laser or UV lamp irradiation on amorphous IGZO thin-film transistors

Hsiao-Wen Zan; Wei Tsung Chen; Cheng Wei Chou; Chuang Chuang Tsai; Ching Neng Huang; Hsiu Wen Hsueh

doi:10.1149/1.3313201

Low temperature annealing with solid-state laser or UV lamp irradiation on amorphous IGZO thin-film transistors

Hsiao-Wen Zan^*, Wei Tsung Chen, Cheng Wei Chou, Chuang Chuang Tsai, Ching Neng Huang, Hsiu Wen Hsueh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Instead of the conventional furnace annealing process with a temperature higher than 300° C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.

Original language	English
Pages (from-to)	H144-H146
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/1.3313201
State	Published - 2010

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abstract = "Instead of the conventional furnace annealing process with a temperature higher than 300° C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.",

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T1 - Low temperature annealing with solid-state laser or UV lamp irradiation on amorphous IGZO thin-film transistors

AU - Zan, Hsiao-Wen

AU - Chen, Wei Tsung

AU - Chou, Cheng Wei

AU - Tsai, Chuang Chuang

AU - Huang, Ching Neng

AU - Hsueh, Hsiu Wen

PY - 2010

Y1 - 2010

N2 - Instead of the conventional furnace annealing process with a temperature higher than 300° C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.

AB - Instead of the conventional furnace annealing process with a temperature higher than 300° C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.

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VL - 13

SP - H144-H146

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 5

ER -

Low temperature annealing with solid-state laser or UV lamp irradiation on amorphous IGZO thin-film transistors

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