Low temperature annealing with solid-state laser or UV lamp irradiation on amorphous IGZO thin-film transistors

Hsiao-Wen Zan*, Wei Tsung Chen, Cheng Wei Chou, Chuang Chuang Tsai, Ching Neng Huang, Hsiu Wen Hsueh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Instead of the conventional furnace annealing process with a temperature higher than 300° C, two low temperature annealing methods are successfully demonstrated to suppress the instability problem of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). With adequate Nd:yttrium aluminum garnet laser (266 nm) annealing energy density or Xe excimer UV lamp (172 nm) irradiation time, the on voltage shift is greatly suppressed from over 10 to 0.1 V. The influence of laser energy density and UV lamp irradiation time on the performance of IGZO TFTs is also investigated and explained. The proposed methods are promising for the development of amorphous IGZO TFTs on flexible substrates.

Original languageEnglish
Pages (from-to)H144-H146
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
StatePublished - 2010

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