Low temperature (850 °C) two-step N2O annealed thin gate oxides

Sung Lai Chao; Len Lee Chung; Fu Lei Tan; Sheng Chao Tien; Hung Peng Chun; Ching Wang Han

doi:10.1557/PROC-428-405

Low temperature (850 °C) two-step N₂O annealed thin gate oxides

Sung Lai Chao^*, Len Lee Chung, Fu Lei Tan, Sheng Chao Tien, Hung Peng Chun, Ching Wang Han

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N₂O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N₂O at 850 °C. The oxide with N₂O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔD_itm) induced by constant current stressing were reduced and charge-to-breakdown (Q_bd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-carrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

Original language	English
Pages (from-to)	405-408
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	428
DOIs	https://doi.org/10.1557/PROC-428-405
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996

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title = "Low temperature (850 °C) two-step N2O annealed thin gate oxides",

abstract = "The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N2O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-carrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.",

author = "Chao, {Sung Lai} and Chung, {Len Lee} and Tan, {Fu Lei} and Tien, {Sheng Chao} and Chun, {Hung Peng} and Han, {Ching Wang}",

year = "1996",

doi = "10.1557/PROC-428-405",

language = "English",

volume = "428",

pages = "405--408",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 11-04-1996",

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TY - JOUR

T1 - Low temperature (850 °C) two-step N2O annealed thin gate oxides

AU - Chao, Sung Lai

AU - Chung, Len Lee

AU - Tan, Fu Lei

AU - Tien, Sheng Chao

AU - Chun, Hung Peng

AU - Han, Ching Wang

PY - 1996

Y1 - 1996

N2 - The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N2O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-carrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

AB - The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N2O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-carrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

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U2 - 10.1557/PROC-428-405

DO - 10.1557/PROC-428-405

M3 - Conference article

AN - SCOPUS:0030378860

SN - 0272-9172

VL - 428

SP - 405

EP - 408

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Low temperature (850 °C) two-step N₂O annealed thin gate oxides

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