Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

K. T. Chan; Albert Chin; S. P. McAlister; Chi-Yang Chang; C. Tseng; V. Liang; J. K. Chen; S. C. Chien; D. S. Duh; W. J. Lin

doi:10.1109/MWSYM.2003.1212529

Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

K. T. Chan^*, Albert Chin, S. P. McAlister, Chi-Yang Chang, C. Tseng, V. Liang, J. K. Chen, S. C. Chien, D. S. Duh, W. J. Lin

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.

Original language	American English
Pages (from-to)	963-966
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.2003.1212529
State	Published - 2003
Event	2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 8 Jun 2003 → 13 Jun 2003

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@article{13719e841ef44409b57c5d791f03a6c6,

title = "Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process",

abstract = "Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.",

author = "Chan, {K. T.} and Albert Chin and McAlister, {S. P.} and Chi-Yang Chang and C. Tseng and V. Liang and Chen, {J. K.} and Chien, {S. C.} and Duh, {D. S.} and Lin, {W. J.}",

year = "2003",

doi = "10.1109/MWSYM.2003.1212529",

language = "American English",

volume = "2",

pages = "963--966",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 08-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

AU - Chan, K. T.

AU - Chin, Albert

AU - McAlister, S. P.

AU - Chang, Chi-Yang

AU - Tseng, C.

AU - Liang, V.

AU - Chen, J. K.

AU - Chien, S. C.

AU - Duh, D. S.

AU - Lin, W. J.

PY - 2003

Y1 - 2003

N2 - Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.

AB - Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.

UR - http://www.scopus.com/inward/record.url?scp=0042092341&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2003.1212529

DO - 10.1109/MWSYM.2003.1212529

M3 - Conference article

AN - SCOPUS:0042092341

SN - 0149-645X

VL - 2

SP - 963

EP - 966

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2003 IEEE MTT-S International Microwave Symposium Digest

Y2 - 8 June 2003 through 13 June 2003

ER -

Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

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