Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

José Ramón Durán Retamal; Chen Fang Kang; Po Kang Yang; Chuan Pei Lee; Der Hsien Lien; Chih Hsiang Ho; Jr Hau He

doi:10.1063/1.4901072

Low-resistivity C54-TiSi₂ as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

José Ramón Durán Retamal, Chen Fang Kang, Po Kang Yang, Chuan Pei Lee, Der Hsien Lien, Chih Hsiang Ho, Jr Hau He^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A three-dimensional (3D) double-layer HfO₂-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi₂ as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi₂ as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (10⁴s), suggesting that the ultrathin sidewall of C54-TiSi₂ nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi₂ sidewall-confinement nanoscale electrodes to VRRAM.

Original language	English
Article number	182101
Journal	Applied Physics Letters
Volume	105
Issue number	18
DOIs	https://doi.org/10.1063/1.4901072
State	Published - 3 Nov 2014

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@article{cc207b791f4541198074f3036ef7e53b,

title = "Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory",

abstract = "A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.",

author = "\{Dur{\'a}n Retamal\}, \{Jos{\'e} Ram{\'o}n\} and Kang, \{Chen Fang\} and Yang, \{Po Kang\} and Lee, \{Chuan Pei\} and Lien, \{Der Hsien\} and Ho, \{Chih Hsiang\} and He, \{Jr Hau\}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = nov,

day = "3",

doi = "10.1063/1.4901072",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

AU - Durán Retamal, José Ramón

AU - Kang, Chen Fang

AU - Yang, Po Kang

AU - Lee, Chuan Pei

AU - Lien, Der Hsien

AU - Ho, Chih Hsiang

AU - He, Jr Hau

PY - 2014/11/3

Y1 - 2014/11/3

N2 - A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.

AB - A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.

UR - https://www.scopus.com/pages/publications/84908587571

U2 - 10.1063/1.4901072

DO - 10.1063/1.4901072

M3 - Article

AN - SCOPUS:84908587571

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182101

ER -

Low-resistivity C54-TiSi₂ as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

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