Abstract
A study was performed on the scheme for fabricating low resistance ohmic contacts to n-GaN. The effects of Argon flow rate on contact resistance for ohmic contacts to n-GaN were also presented. It was found out that the electrical characteristics of ohmic contacts would not be influenced by the effect of hydrogen passivation of dopants in n-GaN.
Original language | English |
---|---|
Pages (from-to) | 1501-1504 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 4 |
DOIs | |
State | Published - 2003 |