Low-pressure crystallization of sol-gel-derived PbZr 0.52 Ti 0.48 O 3 thin films at low temperature for low-voltage operation

Ding Yeong Wang; Chao-Hsin Chien; Chun Yen Chang; Ching Chich Leu; Jung Yen Yang; Shiow Huey Chuang; Tiao Yuan Huang

doi:10.1143/JJAP.42.2756

Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation

Ding Yeong Wang^*, Chao-Hsin Chien, Chun Yen Chang, Ching Chich Leu, Jung Yen Yang, Shiow Huey Chuang, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

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4 Scopus citations

Abstract

The properties of sol-gel-derived 120-nm PbZr_0.52Ti_0.48O₃ thin films crystallized in low-pressure O₂ ambient at 500 °C have been investigated. It is found that PbZr_0.52Ti_0.48O₃ films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O₂ atmosphere. The remanent polarization (i.e., 2P_r) for samples annealed in 60 mbar O₂ ambient is as high as 36 μC/cm², and the coercive field (2E_C) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P-E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr_0.52Ti_0.48O₃ films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO₂ and H₂O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.

Original language	English
Pages (from-to)	2756-2758
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.42.2756
State	Published - May 2003

Keywords

Ferroelectric
Low pressure
Low temperature
PZT
Sol-gel

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Wang, D. Y., Chien, C-H., Chang, C. Y., Leu, C. C., Yang, J. Y., Chuang, S. H., & Huang, T. Y. (2003). Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(5 A), 2756-2758. https://doi.org/10.1143/JJAP.42.2756

@article{a9364a33cf9749a7a814634b1b39bb3b,

title = "Low-pressure crystallization of sol-gel-derived PbZr 0.52 Ti 0.48 O 3 thin films at low temperature for low-voltage operation",

abstract = "The properties of sol-gel-derived 120-nm PbZr0.52Ti0.48O3 thin films crystallized in low-pressure O2 ambient at 500 °C have been investigated. It is found that PbZr0.52Ti0.48O3 films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O2 atmosphere. The remanent polarization (i.e., 2Pr) for samples annealed in 60 mbar O2 ambient is as high as 36 μC/cm2, and the coercive field (2EC) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P-E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr0.52Ti0.48O3 films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO2 and H2O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.",

keywords = "Ferroelectric, Low pressure, Low temperature, PZT, Sol-gel",

author = "Wang, {Ding Yeong} and Chao-Hsin Chien and Chang, {Chun Yen} and Leu, {Ching Chich} and Yang, {Jung Yen} and Chuang, {Shiow Huey} and Huang, {Tiao Yuan}",

year = "2003",

month = may,

doi = "10.1143/JJAP.42.2756",

language = "English",

volume = "42",

pages = "2756--2758",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

Wang, DY, Chien, C-H, Chang, CY, Leu, CC, Yang, JY, Chuang, SH & Huang, TY 2003, 'Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 5 A, pp. 2756-2758. https://doi.org/10.1143/JJAP.42.2756

Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation. / Wang, Ding Yeong; Chien, Chao-Hsin; Chang, Chun Yen et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 5 A, 05.2003, p. 2756-2758.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Low-pressure crystallization of sol-gel-derived PbZr 0.52 Ti 0.48 O 3 thin films at low temperature for low-voltage operation

AU - Wang, Ding Yeong

AU - Chien, Chao-Hsin

AU - Chang, Chun Yen

AU - Leu, Ching Chich

AU - Yang, Jung Yen

AU - Chuang, Shiow Huey

AU - Huang, Tiao Yuan

PY - 2003/5

Y1 - 2003/5

N2 - The properties of sol-gel-derived 120-nm PbZr0.52Ti0.48O3 thin films crystallized in low-pressure O2 ambient at 500 °C have been investigated. It is found that PbZr0.52Ti0.48O3 films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O2 atmosphere. The remanent polarization (i.e., 2Pr) for samples annealed in 60 mbar O2 ambient is as high as 36 μC/cm2, and the coercive field (2EC) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P-E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr0.52Ti0.48O3 films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO2 and H2O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.

AB - The properties of sol-gel-derived 120-nm PbZr0.52Ti0.48O3 thin films crystallized in low-pressure O2 ambient at 500 °C have been investigated. It is found that PbZr0.52Ti0.48O3 films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O2 atmosphere. The remanent polarization (i.e., 2Pr) for samples annealed in 60 mbar O2 ambient is as high as 36 μC/cm2, and the coercive field (2EC) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P-E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr0.52Ti0.48O3 films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO2 and H2O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.

KW - Ferroelectric

KW - Low pressure

KW - Low temperature

KW - PZT

KW - Sol-gel

UR - http://www.scopus.com/inward/record.url?scp=0038042576&partnerID=8YFLogxK

U2 - 10.1143/JJAP.42.2756

DO - 10.1143/JJAP.42.2756

M3 - Article

AN - SCOPUS:0038042576

SN - 0021-4922

VL - 42

SP - 2756

EP - 2758

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5 A

ER -

Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation

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