Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng; Fon Shan Yeh; Albert Chin

doi:10.1002/adma.201002946

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng, Fon Shan Yeh, Albert Chin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

Very high performance Ni/GeO_x/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO_x and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 10⁵ endurance, which are near to the characteristics of existing commercial flash memory.

Original language	English
Pages (from-to)	902-905
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	7
DOIs	https://doi.org/10.1002/adma.201002946
State	Published - 15 Feb 2011

Keywords

flexible electronics
GeO
HfON
resistive random access memory (RRAM)

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10.1002/adma.201002946

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@article{bca50ea684764e95a5e97e1edca8d18e,

title = "Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance",

abstract = "Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.",

keywords = "flexible electronics, GeO, HfON, resistive random access memory (RRAM)",

author = "Cheng, {Chun Hu} and Yeh, {Fon Shan} and Albert Chin",

year = "2011",

month = feb,

day = "15",

doi = "10.1002/adma.201002946",

language = "English",

volume = "23",

pages = "902--905",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "7",

}

TY - JOUR

T1 - Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

AU - Cheng, Chun Hu

AU - Yeh, Fon Shan

AU - Chin, Albert

PY - 2011/2/15

Y1 - 2011/2/15

N2 - Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.

AB - Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.

KW - flexible electronics

KW - GeO

KW - HfON

KW - resistive random access memory (RRAM)

UR - http://www.scopus.com/inward/record.url?scp=79951731656&partnerID=8YFLogxK

U2 - 10.1002/adma.201002946

DO - 10.1002/adma.201002946

M3 - Article

C2 - 21328488

AN - SCOPUS:79951731656

SN - 0935-9648

VL - 23

SP - 902

EP - 905

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Abstract

Keywords

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