Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

Hidetoshi Ishida*, Haruhiko Koizumi, Kazuo Miyatsuji, Hiroshi Takenaka, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

Original languageEnglish
Article number5672297
Pages (from-to)669-672
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 8 Jun 199713 Jun 1997

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