Low power device technology with SiGe channel, HfSiON, and poly-Si gate

Howard C.H. Wang; Shang Jr Chen; Ming Fang Wang; Pang Yen Tsai; Ching Wei Tsai; Ta Wei Wang; Steve M. Ting; Tuo-Hung Hou; Peng Soon Lim; Huan Just Lin; Ying Jin; Hun Jan Tao; Shih Chang Chen; Carlos H. Diaz; Mong Song Liang; Chen-Ming Hu

doi:10.1109/IEDM.2004.1419096

Low power device technology with SiGe channel, HfSiON, and poly-Si gate

Howard C.H. Wang^*, Shang Jr Chen, Ming Fang Wang, Pang Yen Tsai, Ching Wei Tsai, Ta Wei Wang, Steve M. Ting, Tuo-Hung Hou, Peng Soon Lim, Huan Just Lin, Ying Jin, Hun Jan Tao, Shih Chang Chen, Carlos H. Diaz, Mong Song Liang, Chen-Ming Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

We report solutions to the formidable challenges posed by integrating a HfSiON dielectric with a poly-Si gate for low-power device technology. A 1.5 nm EOT HfSiON is demonstrated with mobility comparable to SiO ₂ and 3 orders of magnitude leakage reduction. A novel boron delta-doped strained-SiGe channel points a way out of the high threshold voltage problem associated with Fermi-pinning at the high-k/poly-Si interface and ameliorates short-channel effects in PMOS devices. In addition, a 20% hole mobility enhancement and 15% I _on -I _off characteristics improvement are achieved owing to the compressive SiGe channel. NMOS PBTI lifetime of 35 years, and PMOS NBTI and NMOS hot carrier lifetimes of more than 1000 years are demonstrated at 1.2 V.

Original language	English
Title of host publication	IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
Publisher	IEEE
Pages	161-164
Number of pages	4
ISBN (Print)	0-7803-8684-1
DOIs	https://doi.org/10.1109/IEDM.2004.1419096
State	Published - 1 Dec 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, 2004 IEDM
Country/Territory	United States
City	San Francisco, CA
Period	13/12/04 → 15/12/04

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10.1109/IEDM.2004.1419096

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Wang, H. C. H., Chen, S. J., Wang, M. F., Tsai, P. Y., Tsai, C. W., Wang, T. W., Ting, S. M., Hou, T.-H., Lim, P. S., Lin, H. J., Jin, Y., Tao, H. J., Chen, S. C., Diaz, C. H., Liang, M. S., & Hu, C.-M. (2004). Low power device technology with SiGe channel, HfSiON, and poly-Si gate. In IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST (pp. 161-164). (Technical Digest - International Electron Devices Meeting, IEDM). IEEE. https://doi.org/10.1109/IEDM.2004.1419096

@inproceedings{9c1e3084d05a4633a30109b7fea60e78,

title = "Low power device technology with SiGe channel, HfSiON, and poly-Si gate",

abstract = " We report solutions to the formidable challenges posed by integrating a HfSiON dielectric with a poly-Si gate for low-power device technology. A 1.5 nm EOT HfSiON is demonstrated with mobility comparable to SiO 2 and 3 orders of magnitude leakage reduction. A novel boron delta-doped strained-SiGe channel points a way out of the high threshold voltage problem associated with Fermi-pinning at the high-k/poly-Si interface and ameliorates short-channel effects in PMOS devices. In addition, a 20% hole mobility enhancement and 15% I on -I off characteristics improvement are achieved owing to the compressive SiGe channel. NMOS PBTI lifetime of 35 years, and PMOS NBTI and NMOS hot carrier lifetimes of more than 1000 years are demonstrated at 1.2 V.",

author = "Wang, {Howard C.H.} and Chen, {Shang Jr} and Wang, {Ming Fang} and Tsai, {Pang Yen} and Tsai, {Ching Wei} and Wang, {Ta Wei} and Ting, {Steve M.} and Tuo-Hung Hou and Lim, {Peng Soon} and Lin, {Huan Just} and Ying Jin and Tao, {Hun Jan} and Chen, {Shih Chang} and Diaz, {Carlos H.} and Liang, {Mong Song} and Chen-Ming Hu",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/IEDM.2004.1419096",

language = "English",

isbn = "0-7803-8684-1",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "IEEE",

pages = "161--164",

booktitle = "IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

Wang, HCH, Chen, SJ, Wang, MF, Tsai, PY, Tsai, CW, Wang, TW, Ting, SM, Hou, T-H, Lim, PS, Lin, HJ, Jin, Y, Tao, HJ, Chen, SC, Diaz, CH, Liang, MS & Hu, C-M 2004, Low power device technology with SiGe channel, HfSiON, and poly-Si gate. in IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST. Technical Digest - International Electron Devices Meeting, IEDM, IEEE, pp. 161-164, IEEE International Electron Devices Meeting, 2004 IEDM, San Francisco, CA, United States, 13/12/04. https://doi.org/10.1109/IEDM.2004.1419096

Low power device technology with SiGe channel, HfSiON, and poly-Si gate. / Wang, Howard C.H.; Chen, Shang Jr; Wang, Ming Fang et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST. IEEE, 2004. p. 161-164 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low power device technology with SiGe channel, HfSiON, and poly-Si gate

AU - Wang, Howard C.H.

AU - Chen, Shang Jr

AU - Wang, Ming Fang

AU - Tsai, Pang Yen

AU - Tsai, Ching Wei

AU - Wang, Ta Wei

AU - Ting, Steve M.

AU - Hou, Tuo-Hung

AU - Lim, Peng Soon

AU - Lin, Huan Just

AU - Jin, Ying

AU - Tao, Hun Jan

AU - Chen, Shih Chang

AU - Diaz, Carlos H.

AU - Liang, Mong Song

AU - Hu, Chen-Ming

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We report solutions to the formidable challenges posed by integrating a HfSiON dielectric with a poly-Si gate for low-power device technology. A 1.5 nm EOT HfSiON is demonstrated with mobility comparable to SiO 2 and 3 orders of magnitude leakage reduction. A novel boron delta-doped strained-SiGe channel points a way out of the high threshold voltage problem associated with Fermi-pinning at the high-k/poly-Si interface and ameliorates short-channel effects in PMOS devices. In addition, a 20% hole mobility enhancement and 15% I on -I off characteristics improvement are achieved owing to the compressive SiGe channel. NMOS PBTI lifetime of 35 years, and PMOS NBTI and NMOS hot carrier lifetimes of more than 1000 years are demonstrated at 1.2 V.

AB - We report solutions to the formidable challenges posed by integrating a HfSiON dielectric with a poly-Si gate for low-power device technology. A 1.5 nm EOT HfSiON is demonstrated with mobility comparable to SiO 2 and 3 orders of magnitude leakage reduction. A novel boron delta-doped strained-SiGe channel points a way out of the high threshold voltage problem associated with Fermi-pinning at the high-k/poly-Si interface and ameliorates short-channel effects in PMOS devices. In addition, a 20% hole mobility enhancement and 15% I on -I off characteristics improvement are achieved owing to the compressive SiGe channel. NMOS PBTI lifetime of 35 years, and PMOS NBTI and NMOS hot carrier lifetimes of more than 1000 years are demonstrated at 1.2 V.

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DO - 10.1109/IEDM.2004.1419096

M3 - Conference contribution

AN - SCOPUS:21644438774

SN - 0-7803-8684-1

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 161

EP - 164

BT - IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST

PB - IEEE

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Low power device technology with SiGe channel, HfSiON, and poly-Si gate

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