Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu*, Chien-Nan Kuo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    28 Scopus citations

    Abstract

    A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

    Original languageEnglish
    Title of host publication2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
    Pages365-368
    Number of pages4
    DOIs
    StatePublished - 1 Dec 2006
    Event2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
    Duration: 18 Jan 200620 Jan 2006

    Publication series

    Name2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
    Volume2006

    Conference

    Conference2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
    Country/TerritoryUnited States
    CitySan Diego, CA
    Period18/01/0620/01/06

    Keywords

    • Baluns
    • Phase splitters
    • UWB active baluns

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