Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Nathaniel Safion; Hsin Yuan Chiu; Tzu Ang Chao; Sheng Kai Su; Matthias Passlack; Kuang Hsiang Chiu; Chien Wei Chen; Chi Chung Kei; Chen Han Chou; Tsung En Lee; Jer Fu Wang; Chih Sheng Chang; San Lin Liew; Vincent D.H. Hou; Han Wang; Wen Hao Chang; H. S.Philip Wong; Gregory Pitner; Chao Hsin Chien; Iuliana P. Radu

doi:10.1109/IEDM45741.2023.10413771

Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Nathaniel Safion^*, Hsin Yuan Chiu, Tzu Ang Chao, Sheng Kai Su, Matthias Passlack, Kuang Hsiang Chiu, Chien Wei Chen, Chi Chung Kei, Chen Han Chou, Tsung En Lee, Jer Fu Wang, Chih Sheng Chang, San Lin Liew, Vincent D.H. Hou, Han Wang, Wen Hao Chang, H. S.Philip Wong, Gregory Pitner, Chao Hsin Chien, Iuliana P. Radu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Low n-type contact resistance (R_C) of 9.7 kO/CNT to carbon nanotubes (CNT) with short contact length (L_C) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent electron conduction for both Pd and Ti metal contacts. We systematically explore doping strength control with barrier thickness, R_C trends scaling down to 20 nm L_C, CNT bandgap dependence of doping, and device stability for insight into electrical impact of key process parameters. Symmetric R_C n- and p-FET reveals a clear path to meet IRDS target for 2034 device roadmap.

Original language	English
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413771
State	Published - 2023
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: 9 Dec 2023 → 13 Dec 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	9/12/23 → 13/12/23

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10.1109/IEDM45741.2023.10413771

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Safion, N., Chiu, H. Y., Chao, T. A., Su, S. K., Passlack, M., Chiu, K. H., Chen, C. W., Kei, C. C., Chou, C. H., Lee, T. E., Wang, J. F., Chang, C. S., Liew, S. L., Hou, V. D. H., Wang, H., Chang, W. H., Wong, H. S. P., Pitner, G., Chien, C. H., & Radu, I. P. (2023). Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413771

@inproceedings{9d81618bfa1b4163811125f45f6e06c5,

title = "Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping",

abstract = "Low n-type contact resistance (RC) of 9.7 kO/CNT to carbon nanotubes (CNT) with short contact length (LC) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent electron conduction for both Pd and Ti metal contacts. We systematically explore doping strength control with barrier thickness, RC trends scaling down to 20 nm LC, CNT bandgap dependence of doping, and device stability for insight into electrical impact of key process parameters. Symmetric RC n- and p-FET reveals a clear path to meet IRDS target for 2034 device roadmap.",

author = "Nathaniel Safion and Chiu, {Hsin Yuan} and Chao, {Tzu Ang} and Su, {Sheng Kai} and Matthias Passlack and Chiu, {Kuang Hsiang} and Chen, {Chien Wei} and Kei, {Chi Chung} and Chou, {Chen Han} and Lee, {Tsung En} and Wang, {Jer Fu} and Chang, {Chih Sheng} and Liew, {San Lin} and Hou, {Vincent D.H.} and Han Wang and Chang, {Wen Hao} and Wong, {H. S.Philip} and Gregory Pitner and Chien, {Chao Hsin} and Radu, {Iuliana P.}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413771",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International Electron Devices Meeting, IEDM 2023",

address = "United States",

}

Safion, N, Chiu, HY, Chao, TA, Su, SK, Passlack, M, Chiu, KH, Chen, CW, Kei, CC, Chou, CH, Lee, TE, Wang, JF, Chang, CS, Liew, SL, Hou, VDH, Wang, H, Chang, WH, Wong, HSP, Pitner, G, Chien, CH & Radu, IP 2023, Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 9/12/23. https://doi.org/10.1109/IEDM45741.2023.10413771

Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping. / Safion, Nathaniel; Chiu, Hsin Yuan; Chao, Tzu Ang et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

AU - Safion, Nathaniel

AU - Chiu, Hsin Yuan

AU - Chao, Tzu Ang

AU - Su, Sheng Kai

AU - Passlack, Matthias

AU - Chiu, Kuang Hsiang

AU - Chen, Chien Wei

AU - Kei, Chi Chung

AU - Chou, Chen Han

AU - Lee, Tsung En

AU - Wang, Jer Fu

AU - Chang, Chih Sheng

AU - Liew, San Lin

AU - Hou, Vincent D.H.

AU - Wang, Han

AU - Chang, Wen Hao

AU - Wong, H. S.Philip

AU - Pitner, Gregory

AU - Chien, Chao Hsin

AU - Radu, Iuliana P.

PY - 2023

Y1 - 2023

N2 - Low n-type contact resistance (RC) of 9.7 kO/CNT to carbon nanotubes (CNT) with short contact length (LC) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent electron conduction for both Pd and Ti metal contacts. We systematically explore doping strength control with barrier thickness, RC trends scaling down to 20 nm LC, CNT bandgap dependence of doping, and device stability for insight into electrical impact of key process parameters. Symmetric RC n- and p-FET reveals a clear path to meet IRDS target for 2034 device roadmap.

AB - Low n-type contact resistance (RC) of 9.7 kO/CNT to carbon nanotubes (CNT) with short contact length (LC) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent electron conduction for both Pd and Ti metal contacts. We systematically explore doping strength control with barrier thickness, RC trends scaling down to 20 nm LC, CNT bandgap dependence of doping, and device stability for insight into electrical impact of key process parameters. Symmetric RC n- and p-FET reveals a clear path to meet IRDS target for 2034 device roadmap.

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U2 - 10.1109/IEDM45741.2023.10413771

DO - 10.1109/IEDM45741.2023.10413771

M3 - Conference contribution

AN - SCOPUS:85185573694

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2023 International Electron Devices Meeting, IEDM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Electron Devices Meeting, IEDM 2023

Y2 - 9 December 2023 through 13 December 2023

ER -

Safion N, Chiu HY, Chao TA, Su SK, Passlack M, Chiu KH et al. Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping. In 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45741.2023.10413771

Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

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