Low-leakage-current DRAM-like memory using a one-transistor ferroelectric MOSFET with a Hf-based gate dielectric

Keyphrases

• Aspect Ratio 50%
• Capacitor Leakage Current 50%
• Capacitors 50%
• CMOS Processing 50%
• Current Dynamics 100%
• Display Dynamics 50%
• Downscaling 50%
• Dynamic Random Access Memory 100%
• Endurance Cycle 50%
• Gate Dielectric 100%
• High Dielectric Constant Materials 50%
• Low Leakage Current 100%
• Memory Function 50%
• Memory-like 100%
• MOSFET 100%
• MOSFET Device 50%
• Off-state Leakage Current 50%
• PMOSFET 50%
• Power Consumption 50%
• Random Access 100%
• Switching Time 50%
• Transistor 100%

Material Science

• Capacitor 66%
• Dielectric Material 100%
• Ferroelectric Material 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Novel Device 33%
• Permittivity 33%
• Transistor 100%

Engineering

• Aspect Ratio 33%
• Dynamic Random Access Memory 100%
• Electric Power Utilization 33%
• Gate Dielectric 100%
• High Dielectric Constant 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Switching Time 33%