Low-leakage bidirectional SCR with symmetrical trigger circuit for ESD protection in 40-nm CMOS process

Federico A. Altolaguirre; Ming-Dou Ker

doi:10.1109/TDMR.2016.2600276

Low-leakage bidirectional SCR with symmetrical trigger circuit for ESD protection in 40-nm CMOS process

Federico A. Altolaguirre, Ming-Dou Ker

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMMwith a very low standby leakage current of -27 nA at 25 °C and a bias voltage of 0.9 V with a silicon footprint of only 13 μm × 100 μm.

Original language	English
Article number	7543508
Pages (from-to)	549-555
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/TDMR.2016.2600276
State	Published - 1 Dec 2016

Keywords

Bidirectional SCR
Electrostatic discharge (ESD) protection
Mixed voltage
Siliconcontrolled rectifier (SCR)

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10.1109/TDMR.2016.2600276

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title = "Low-leakage bidirectional SCR with symmetrical trigger circuit for ESD protection in 40-nm CMOS process",

abstract = "This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMMwith a very low standby leakage current of -27 nA at 25 °C and a bias voltage of 0.9 V with a silicon footprint of only 13 μm × 100 μm.",

keywords = "Bidirectional SCR, Electrostatic discharge (ESD) protection, Mixed voltage, Siliconcontrolled rectifier (SCR)",

author = "Altolaguirre, {Federico A.} and Ming-Dou Ker",

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AU - Altolaguirre, Federico A.

AU - Ker, Ming-Dou

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Y1 - 2016/12/1

N2 - This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMMwith a very low standby leakage current of -27 nA at 25 °C and a bias voltage of 0.9 V with a silicon footprint of only 13 μm × 100 μm.

AB - This paper presents a novel bidirectional electrostatic discharge protection device based on a dual silicon-controlled rectifier with a symmetrical trigger circuit. The proposed device has been realized and verified in a 40-nm CMOS process, which can pass a 3.75-kV HBMand a 250-VMMwith a very low standby leakage current of -27 nA at 25 °C and a bias voltage of 0.9 V with a silicon footprint of only 13 μm × 100 μm.

KW - Bidirectional SCR

KW - Electrostatic discharge (ESD) protection

KW - Mixed voltage

KW - Siliconcontrolled rectifier (SCR)

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U2 - 10.1109/TDMR.2016.2600276

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VL - 16

SP - 549

EP - 555

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 4

M1 - 7543508

ER -

Low-leakage bidirectional SCR with symmetrical trigger circuit for ESD protection in 40-nm CMOS process

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Keywords

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