Low-K/Cu CMOS-based SoC technology with 115-GHz fT, 100-GHz fmax, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Jyh-Chyurn Guo*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Scopus citations

    Abstract

    Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NF min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-;μm low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.

    Original languageEnglish
    Article number1668232
    Pages (from-to)331-338
    Number of pages8
    JournalIEEE Transactions on Semiconductor Manufacturing
    Volume19
    Issue number3
    DOIs
    StatePublished - 1 Aug 2006

    Keywords

    • f
    • f
    • Inductor
    • MiM capacitor
    • NF
    • RF CMOS
    • Varactor

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