TY - GEN
T1 - Low-I RESET unipolar HfO 2 RRAM and tunable resistive-switching mode via interface engineering
AU - Lin, Kuan Liang
AU - Hou, Tuo-Hung
AU - Lee, Yao Jen
AU - Lin, Jun Hung
AU - Chang, Jhe Wei
AU - Shieh, Jiann
AU - Chou, Cheng Tung
AU - Chang, Wen Hsiung
AU - Jang, Wen Yueh
AU - Lin, Chen Hsi
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.
AB - Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.
UR - http://www.scopus.com/inward/record.url?scp=84863142049&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2011.6135404
DO - 10.1109/ISDRS.2011.6135404
M3 - Conference contribution
AN - SCOPUS:84863142049
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
Y2 - 7 December 2011 through 9 December 2011
ER -