Low frequency noise in nanoscale pMOSFETs with strain induced mobility enhancement and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations

    Abstract

    Local strain effect on low frequency noise (LFN) of pMOSFETs with gate length down to 60 nm was investigated in this paper. Novel and interesting results were identified from the pMOSFETs adopting embedded SiGe (e-SiGe) in source/drain for uni-axial compressive stress. This local compressive strain can realize significant mobility enhancement and desired current boost in nanoscale pMOSFETs. However, the dramatic increase of LFN emerges as a penalty traded off with mobility enhancement. The escalated LFN may become a critical killer to analog and RF circuits. Forward body biases (FBB) can improve the effective mobility (μeff) and reduce LFN attributed to reduced normal field (Eeff). However, the benefit from FBB becomes insignificant in strained pMOSFETs with sub-100 nm gate length.

    Original languageEnglish
    Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
    Pages785-788
    Number of pages4
    DOIs
    StatePublished - 1 Dec 2009
    Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
    Duration: 7 Jun 200912 Jun 2009

    Publication series

    NameIEEE MTT-S International Microwave Symposium Digest
    ISSN (Print)0149-645X

    Conference

    Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
    Country/TerritoryUnited States
    CityBoston, MA
    Period7/06/0912/06/09

    Keywords

    • Low frequency noise
    • Mobility
    • pMOSFET
    • Strain

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