Low-frequency noise analysis of Si/SiGe channel pMOSFETs

Pei-Wen Li; W. M. Liao

doi:10.1016/S0038-1101(02)00231-9

Low-frequency noise analysis of Si/SiGe channel pMOSFETs

Pei-Wen Li^*, W. M. Liao

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Low-frequency noise characteristics of 0.1 μm Si_1-xGe_x channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si_1-xGe_x channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si_1-xGe_x channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO₂ interface by Ge-induced band offset.

Original language	English
Pages (from-to)	2281-2285
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00231-9
State	Published - Dec 2002

Keywords

1/f noise
Flicker noise
MOSFETs
SiGe

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10.1016/S0038-1101(02)00231-9

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title = "Low-frequency noise analysis of Si/SiGe channel pMOSFETs",

abstract = "Low-frequency noise characteristics of 0.1 μm Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si1-xGex channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si1-xGex channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO2 interface by Ge-induced band offset.",

keywords = "1/f noise, Flicker noise, MOSFETs, SiGe",

author = "Pei-Wen Li and Liao, {W. M.}",

year = "2002",

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doi = "10.1016/S0038-1101(02)00231-9",

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AU - Li, Pei-Wen

AU - Liao, W. M.

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Y1 - 2002/12

N2 - Low-frequency noise characteristics of 0.1 μm Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si1-xGex channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si1-xGex channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO2 interface by Ge-induced band offset.

AB - Low-frequency noise characteristics of 0.1 μm Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si1-xGex channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si1-xGex channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si-SiO2 interface by Ge-induced band offset.

KW - 1/f noise

KW - Flicker noise

KW - MOSFETs

KW - SiGe

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DO - 10.1016/S0038-1101(02)00231-9

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SP - 2281

EP - 2285

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Low-frequency noise analysis of Si/SiGe channel pMOSFETs

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Keywords

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