Low-defect-density WS2 by hydroxide vapor phase deposition

Yi Wan; En Li; Zhihao Yu; Jing Kai Huang; Ming Yang Li; Ang Sheng Chou; Yi Te Lee; Chien Ju Lee; Hung Chang Hsu; Qin Zhan; Areej Aljarb; Jui Han Fu; Shao Pin Chiu; Xinran Wang; Juhn Jong Lin; Ya Ping Chiu; Wen Hao Chang; Han Wang; Yumeng Shi; Nian Lin; Yingchun Cheng; Vincent Tung; Lain Jong Li

doi:10.1038/s41467-022-31886-0

Low-defect-density WS₂ by hydroxide vapor phase deposition

Yi Wan, En Li, Zhihao Yu, Jing Kai Huang, Ming Yang Li, Ang Sheng Chou, Yi Te Lee, Chien Ju Lee, Hung Chang Hsu, Qin Zhan, Areej Aljarb, Jui Han Fu, Shao Pin Chiu, Xinran Wang, Juhn Jong Lin, Ya Ping Chiu, Wen Hao Chang, Han Wang, Yumeng Shi, Nian LinYingchun Cheng^*, Vincent Tung^*, Lain Jong Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm²/Vs (~800 cm²/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Original language	English
Article number	4149
Journal	Nature Communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-31886-0
State	Published - Dec 2022

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Wan, Y., Li, E., Yu, Z., Huang, J. K., Li, M. Y., Chou, A. S., Lee, Y. T., Lee, C. J., Hsu, H. C., Zhan, Q., Aljarb, A., Fu, J. H., Chiu, S. P., Wang, X., Lin, J. J., Chiu, Y. P., Chang, W. H., Wang, H., Shi, Y., ... Li, L. J. (2022). Low-defect-density WS₂ by hydroxide vapor phase deposition. Nature Communications, 13(1), Article 4149. https://doi.org/10.1038/s41467-022-31886-0

@article{055e14d2b2ae4d92b5d39cc05a9ed8be,

title = "Low-defect-density WS2 by hydroxide vapor phase deposition",

abstract = "Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore{\textquoteright}s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.",

author = "Yi Wan and En Li and Zhihao Yu and Huang, {Jing Kai} and Li, {Ming Yang} and Chou, {Ang Sheng} and Lee, {Yi Te} and Lee, {Chien Ju} and Hsu, {Hung Chang} and Qin Zhan and Areej Aljarb and Fu, {Jui Han} and Chiu, {Shao Pin} and Xinran Wang and Lin, {Juhn Jong} and Chiu, {Ya Ping} and Chang, {Wen Hao} and Han Wang and Yumeng Shi and Nian Lin and Yingchun Cheng and Vincent Tung and Li, {Lain Jong}",

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year = "2022",

month = dec,

doi = "10.1038/s41467-022-31886-0",

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AU - Li, En

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AU - Chou, Ang Sheng

AU - Lee, Yi Te

AU - Lee, Chien Ju

AU - Hsu, Hung Chang

AU - Zhan, Qin

AU - Aljarb, Areej

AU - Fu, Jui Han

AU - Chiu, Shao Pin

AU - Wang, Xinran

AU - Lin, Juhn Jong

AU - Chiu, Ya Ping

AU - Chang, Wen Hao

AU - Wang, Han

AU - Shi, Yumeng

AU - Lin, Nian

AU - Cheng, Yingchun

AU - Tung, Vincent

AU - Li, Lain Jong

PY - 2022/12

Y1 - 2022/12

N2 - Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

AB - Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

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Low-defect-density WS₂ by hydroxide vapor phase deposition

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