Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure
- S. Z. Rahaman
- , S. Maikap*
- , C. H. Lin
- , T. Y. Wu
- , Y. S. Chen
- , P. J. Tzeng
- , F. Chen
- , C. S. Lai
- , M. J. Kao
- , M. J. Tsai
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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