Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

S. Z. Rahaman; S. Maikap; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; C. S. Lai; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2009.5159279

Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure

S. Z. Rahaman
, S. Maikap^*
, C. H. Lin
, T. Y. Wu
, Y. S. Chen
, P. J. Tzeng
, F. Chen
, C. S. Lai
, M. J. Kao
, M. J. Tsai

^*Corresponding author for this work

Institute of Pioneer Semiconductor Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta₂O₅/W structure has been proposed. The low resistance state (R_Low) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R_High/R_Low) of 5.3x10₇, good endurance of >10₃ cycles, and excellent retention >11 hours) with resistance ratio of > 9x10₃ can be useful in future nonvolatile memory applications.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159279
State	Published - 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 27 Apr 2009 → 29 Apr 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan
City	Hsinchu
Period	27/04/09 → 29/04/09

Access to Document

10.1109/VTSA.2009.5159279

Cite this

Rahaman, S. Z., Maikap, S., Lin, C. H., Wu, T. Y., Chen, Y. S., Tzeng, P. J., Chen, F., Lai, C. S., Kao, M. J., & Tsai, M. J. (2009). Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 33-34). Article 5159279 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159279

@inproceedings{1ff2fce5edf7414aa3181bf584ca0189,

title = "Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure",

abstract = "Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.",

author = "Rahaman, \{S. Z.\} and S. Maikap and Lin, \{C. H.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and Tzeng, \{P. J.\} and F. Chen and Lai, \{C. S.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2009",

doi = "10.1109/VTSA.2009.5159279",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "33--34",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Rahaman, SZ, Maikap, S, Lin, CH, Wu, TY, Chen, YS, Tzeng, PJ, Chen, F, Lai, CS, Kao, MJ & Tsai, MJ 2009, Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159279, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 33-34, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159279

Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. / Rahaman, S. Z.; Maikap, S.; Lin, C. H. et al.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 33-34 5159279 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Y. S.

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AB - Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.

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ER -

Rahaman SZ, Maikap S, Lin CH, Wu TY, Chen YS, Tzeng PJ et al. Low current and voltage resistive switching memory device using novel Cu/Ta₂O₅/W structure. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 33-34. 5159279. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159279