Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

S. Z. Rahaman, S. Maikap*, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, C. S. Lai, M. J. Kao, M. J. Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages33-34
Number of pages2
DOIs
StatePublished - 2009
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan
Duration: 27 Apr 200929 Apr 2009

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/TerritoryTaiwan
CityHsinchu
Period27/04/0929/04/09

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