@inproceedings{1ff2fce5edf7414aa3181bf584ca0189,
title = "Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure",
abstract = "Low current/voltage (-10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3x107, good endurance of >103 cycles, and excellent retention >11 hours) with resistance ratio of > 9x103 can be useful in future nonvolatile memory applications.",
author = "Rahaman, {S. Z.} and S. Maikap and Lin, {C. H.} and Wu, {T. Y.} and Chen, {Y. S.} and Tzeng, {P. J.} and F. Chen and Lai, {C. S.} and Kao, {M. J.} and Tsai, {M. J.}",
year = "2009",
doi = "10.1109/VTSA.2009.5159279",
language = "English",
isbn = "9781424427857",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
pages = "33--34",
booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",
note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",
}