Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen; Y. F. Chuang; C. C. Lee; C. I. Hsieh; Fu-Hsiang Ko; L. A. Wang

doi:10.1016/S0167-9317(03)00084-4

Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen^*, Y. F. Chuang, C. C. Lee, C. I. Hsieh, Fu-Hsiang Ko, L. A. Wang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F₂ (157 nm) excimer laser lithography. The top TEOS oxide film is an NH₃-contaminant-free material that can be used as an NH₃ capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

Original language	English
Pages (from-to)	312-318
Number of pages	7
Journal	Microelectronic Engineering
Volume	67-68
DOIs	https://doi.org/10.1016/S0167-9317(03)00084-4
State	Published - Jun 2003
Event	Proceedings of the 28th International Conference on MNE - Lugano, Switzerland Duration: 16 Sep 2002 → 19 Sep 2002

Keywords

157 nm lithography
193 nm lithography
Bilayer structure
Bottom antireflective coatings
Low alkaline contamination

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10.1016/S0167-9317(03)00084-4

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title = "Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications",

abstract = "A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.",

keywords = "157 nm lithography, 193 nm lithography, Bilayer structure, Bottom antireflective coatings, Low alkaline contamination",

author = "Chen, {H. L.} and Chuang, {Y. F.} and Lee, {C. C.} and Hsieh, {C. I.} and Fu-Hsiang Ko and Wang, {L. A.}",

year = "2003",

month = jun,

doi = "10.1016/S0167-9317(03)00084-4",

language = "English",

volume = "67-68",

pages = "312--318",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

note = "Proceedings of the 28th International Conference on MNE ; Conference date: 16-09-2002 Through 19-09-2002",

}

TY - JOUR

T1 - Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

AU - Chen, H. L.

AU - Chuang, Y. F.

AU - Lee, C. C.

AU - Hsieh, C. I.

AU - Ko, Fu-Hsiang

AU - Wang, L. A.

PY - 2003/6

Y1 - 2003/6

N2 - A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

AB - A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

KW - 157 nm lithography

KW - 193 nm lithography

KW - Bilayer structure

KW - Bottom antireflective coatings

KW - Low alkaline contamination

UR - http://www.scopus.com/inward/record.url?scp=0038359113&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00084-4

DO - 10.1016/S0167-9317(03)00084-4

M3 - Conference article

AN - SCOPUS:0038359113

SN - 0167-9317

VL - 67-68

SP - 312

EP - 318

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - Proceedings of the 28th International Conference on MNE

Y2 - 16 September 2002 through 19 September 2002

ER -

Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

Abstract

Keywords

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