@inproceedings{344d4b7d3ab64dd69e58cf4fd544660f,
title = "Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy",
abstract = "We demonstrate ridge-waveguide InGaAsN/GaAs single quantum well lasers at wavelength 1.3 and 1.4 μm grown by molecular beam epitaxy using radio frequency plasma nitrogen source. Threshold current density of 0.57 and 3.87 KA/cm2 at λ=1.3 and 1.4 μm, respectively, were obtained for the lasers with a 3-μm ridge width and a 2-mm cavity length. Slope efficiencies of 0.67 and 0.37 W/A were obtained for λ=1.3 and 1.4 μm emission, respectively, with cavity length L=1 mm. The cw kink-free output power of wavelength 1.3 μm single lateral mode laser is more than 150 mW, and the maximum total wallplug efficiency of 29% was obtained.",
author = "Wang, {J. S.} and Kovsh, {A. R.} and Hsiao, {R. S.} and Kuo-Jui Lin and Livshits, {D. A.} and Chen, {I. F.} and Wu, {Y. T.} and Chen, {L. P.} and Jenn-Fang Chen and Chi, {J. Y.}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 ; Conference date: 15-12-2003 Through 19-12-2003",
year = "2003",
doi = "10.1109/CLEOPR.2003.1277045",
language = "English",
series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "497",
booktitle = "CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics",
address = "美國",
}