Long-endurance nanocrystal TIO 2 resistive memory using a TaON buffer layer

C. H. Cheng; P. C. Chen; Y. H. Wu; F. S. Yeh; Albert Chin

doi:10.1109/LED.2011.2168939

Long-endurance nanocrystal TIO ₂ resistive memory using a TaON buffer layer

C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, Albert Chin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Using nanocrystal (nc) TiO₂ and TaON buffer layer, the Ni/GeO_x/nc-TiO₂/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10¹⁰ cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Original language	English
Article number	6058577
Pages (from-to)	1749-1751
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2168939
State	Published - Dec 2011

Keywords

GeO
Hopping conduction
Resistive random access memory (RRAM)
TiO

Access to Document

10.1109/LED.2011.2168939

Cite this

@article{898151f82b8548af9b4e5ff346b37a72,

title = "Long-endurance nanocrystal TIO 2 resistive memory using a TaON buffer layer",

abstract = "Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.",

keywords = "GeO, Hopping conduction, Resistive random access memory (RRAM), TiO",

author = "Cheng, {C. H.} and Chen, {P. C.} and Wu, {Y. H.} and Yeh, {F. S.} and Albert Chin",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2168939",

language = "English",

volume = "32",

pages = "1749--1751",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Long-endurance nanocrystal TIO 2 resistive memory using a TaON buffer layer

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2011/12

Y1 - 2011/12

N2 - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

AB - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

KW - GeO

KW - Hopping conduction

KW - Resistive random access memory (RRAM)

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=81855206563&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2168939

DO - 10.1109/LED.2011.2168939

M3 - Article

AN - SCOPUS:81855206563

SN - 0741-3106

VL - 32

SP - 1749

EP - 1751

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

M1 - 6058577

ER -

Long-endurance nanocrystal TIO ₂ resistive memory using a TaON buffer layer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this