Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

Bae Horng Chen; Po Yuan Lo; Jeng Hua Wei; Ming Jinn Tsai; Chien Liang Hwang; Tien-Sheng Chao; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1149/1.2035696

Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

Bae Horng Chen^*, Po Yuan Lo, Jeng Hua Wei, Ming Jinn Tsai, Chien Liang Hwang, Tien-Sheng Chao, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/1.2035696
State	Published - 7 Oct 2005

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abstract = "Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.",

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AU - Chen, Bae Horng

AU - Lo, Po Yuan

AU - Wei, Jeng Hua

AU - Tsai, Ming Jinn

AU - Hwang, Chien Liang

AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2005/10/7

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N2 - Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.

AB - Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

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