Abstract
In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm2 and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5° and 3.6 μm, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 × 10-3. The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.
Original language | English |
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Article number | 6488713 |
Number of pages | 6 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2013 |
Keywords
- GaN
- mode localization
- nanopillar