Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee; Chia Hao Fan; Wen Luh Yang; Wen Yan Lin; Bohr Ran Huang; Tien-Sheng Chao; D. S. Chuu

doi:10.1109/IPFA.2006.251004

Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee^*
, Chia Hao Fan
, Wen Luh Yang
, Wen Yan Lin
, Bohr Ran Huang
, Tien-Sheng Chao
, D. S. Chuu

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages	88-91
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2006.251004
State	Published - 1 Dec 2006
Event	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore Duration: 3 Jul 2006 → 7 Jul 2006

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Country/Territory	Singapore
City	Singapore
Period	3/07/06 → 7/07/06

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10.1109/IPFA.2006.251004

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Lee, Y. J., Fan, C. H., Yang, W. L., Lin, W. Y., Huang, B. R., Chao, T.-S., & Chuu, D. S. (2006). Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 88-91). Article 4017029 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251004

Lee, Yao Jen ; Fan, Chia Hao ; Yang, Wen Luh et al. / Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses : Mobility enhancement, size dependence, and hot carrier stress. Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. pp. 88-91 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{cededd69fd4e4b7f9fbaa41881f6c156,

title = "Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress",

author = "Lee, \{Yao Jen\} and Fan, \{Chia Hao\} and Yang, \{Wen Luh\} and Lin, \{Wen Yan\} and Huang, \{Bohr Ran\} and Tien-Sheng Chao and Chuu, \{D. S.\}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IPFA.2006.251004",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "88--91",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Lee, YJ, Fan, CH, Yang, WL, Lin, WY, Huang, BR, Chao, T-S & Chuu, DS 2006, Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. in Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017029, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 88-91, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.251004

Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. / Lee, Yao Jen; Fan, Chia Hao; Yang, Wen Luh et al.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 88-91 4017029 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

AU - Lee, Yao Jen

AU - Fan, Chia Hao

AU - Yang, Wen Luh

AU - Lin, Wen Yan

AU - Huang, Bohr Ran

AU - Chao, Tien-Sheng

AU - Chuu, D. S.

PY - 2006/12/1

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DO - 10.1109/IPFA.2006.251004

M3 - Conference contribution

AN - SCOPUS:34250669668

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 88

EP - 91

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Lee YJ, Fan CH, Yang WL, Lin WY, Huang BR, Chao TS et al. Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 88-91. 4017029. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.251004

Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

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