Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin; V. A. Gritsenko; Albert Chin

doi:10.1134/S1063785018050279

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin^*, V. A. Gritsenko, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si₃N₄) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si₃N₄ contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si₃N₄.

Original language	English
Pages (from-to)	424-427
Number of pages	4
Journal	Technical Physics Letters
Volume	44
Issue number	5
DOIs	https://doi.org/10.1134/S1063785018050279
State	Published - 1 May 2018

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title = "Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride",

abstract = "Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.",

author = "Volodin, {V. A.} and Gritsenko, {V. A.} and Albert Chin",

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AU - Volodin, V. A.

AU - Gritsenko, V. A.

AU - Chin, Albert

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

AB - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

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DO - 10.1134/S1063785018050279

M3 - Article

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SP - 424

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JO - Technical Physics Letters

JF - Technical Physics Letters

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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

Abstract

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