Local electric-field-induced oxidation of titanium nitride films

S. Gwo; C. L. Yeh; P. F. Chen; Y. C. Chou; T. T. Chen; Tien-Sheng Chao; S. F. Hu; T. Y. Huang

doi:10.1063/1.123491

Local electric-field-induced oxidation of titanium nitride films

S. Gwo^*, C. L. Yeh, P. F. Chen, Y. C. Chou, T. T. Chen, Tien-Sheng Chao, S. F. Hu, T. Y. Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Nanometer-scale patterning of TiN films grown on SiO₂/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

Original language	English
Pages (from-to)	1090-1092
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	8
DOIs	https://doi.org/10.1063/1.123491
State	Published - 1 Dec 1999

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@article{a49e2fb4653547c9957edd73c2561aac,

title = "Local electric-field-induced oxidation of titanium nitride films",

abstract = "Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.",

author = "S. Gwo and Yeh, {C. L.} and Chen, {P. F.} and Chou, {Y. C.} and Chen, {T. T.} and Tien-Sheng Chao and Hu, {S. F.} and Huang, {T. Y.}",

year = "1999",

month = dec,

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doi = "10.1063/1.123491",

language = "English",

volume = "74",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Local electric-field-induced oxidation of titanium nitride films

AU - Gwo, S.

AU - Yeh, C. L.

AU - Chen, P. F.

AU - Chou, Y. C.

AU - Chen, T. T.

AU - Chao, Tien-Sheng

AU - Hu, S. F.

AU - Huang, T. Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

AB - Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

UR - http://www.scopus.com/inward/record.url?scp=0000379348&partnerID=8YFLogxK

U2 - 10.1063/1.123491

DO - 10.1063/1.123491

M3 - Article

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SN - 0003-6951

VL - 74

SP - 1090

EP - 1092

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Local electric-field-induced oxidation of titanium nitride films

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