Abstract
CDM ESD events can be a potential threat to SoC designs or heterogeneous 3D ICs with multiple power domains. Inter-layer (or interface) circuits may need a local CDM ESD clamp that can prevent the unexpected failure under CDM ESD stress. In this letter, two local CDM ESD clamp circuits are proposed. They show better clamping efficiency under 2-ns vfTLP stress.
Original language | English |
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Article number | 6807728 |
Pages (from-to) | 781-783 |
Number of pages | 3 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 14 |
Issue number | 2 |
DOIs | |
State | Published - 1 Jan 2014 |
Keywords
- 3D stacked ICs
- charged device model (CDM)
- cross-power domains ESD events
- Electrostatic discharge (ESD)
- vary-fast transmission line pulsing (vfTLP) systems