Liquid phase deposited SiO2 on GaN

H. R. Wu; K. W. Lee; T. B. Nian; D. W. Chou; J. J. Huang Wu; Y. H. Wang; M. P. Houng; P. W. Sze; Y. K. Su; S. J. Chang; C. H. Ho; C. I. Chiang; Y. T. Chern; F. S. Juang; T. C. Wen; Wei-I Lee; J. I. Chyi

doi:10.1016/S0254-0584(02)00504-7

Liquid phase deposited SiO₂ on GaN

H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang Wu, Y. H. Wang^*, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, Wei-I Lee, J. I. Chyi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H₂SiF₆ and H₃BO₃ solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO₂ films will be characterized.

Original language	English
Pages (from-to)	329-333
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	80
Issue number	1
DOIs	https://doi.org/10.1016/S0254-0584(02)00504-7
State	Published - 29 Apr 2003

Keywords

Liquid phase deposition
Silicon dioxide

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10.1016/S0254-0584(02)00504-7

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title = "Liquid phase deposited SiO2 on GaN",

abstract = "An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.",

keywords = "Liquid phase deposition, Silicon dioxide",

author = "Wu, {H. R.} and Lee, {K. W.} and Nian, {T. B.} and Chou, {D. W.} and {Huang Wu}, {J. J.} and Wang, {Y. H.} and Houng, {M. P.} and Sze, {P. W.} and Su, {Y. K.} and Chang, {S. J.} and Ho, {C. H.} and Chiang, {C. I.} and Chern, {Y. T.} and Juang, {F. S.} and Wen, {T. C.} and Wei-I Lee and Chyi, {J. I.}",

year = "2003",

month = apr,

day = "29",

doi = "10.1016/S0254-0584(02)00504-7",

language = "English",

volume = "80",

pages = "329--333",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

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TY - JOUR

T1 - Liquid phase deposited SiO2 on GaN

AU - Wu, H. R.

AU - Lee, K. W.

AU - Nian, T. B.

AU - Chou, D. W.

AU - Huang Wu, J. J.

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Sze, P. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Ho, C. H.

AU - Chiang, C. I.

AU - Chern, Y. T.

AU - Juang, F. S.

AU - Wen, T. C.

AU - Lee, Wei-I

AU - Chyi, J. I.

PY - 2003/4/29

Y1 - 2003/4/29

N2 - An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.

AB - An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.

KW - Liquid phase deposition

KW - Silicon dioxide

UR - http://www.scopus.com/inward/record.url?scp=0037472173&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(02)00504-7

DO - 10.1016/S0254-0584(02)00504-7

M3 - Article

AN - SCOPUS:0037472173

SN - 0254-0584

VL - 80

SP - 329

EP - 333

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1

ER -

Liquid phase deposited SiO₂ on GaN

Abstract

Keywords

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