Linearity improvement for power MESFET devices using source inductive feedback and input impedance mismatch

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Abstract

Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with source-via-hole ground and with source-bond-wire ground are used to investigate the effect of source inductive feedback and input impedance mismatch on the effect of linearity. The output matching for all the devices are tuned for the maximum power condition. At 2.4 GHz, the device without source-bond-wire ground and input impedance mismatched has the highest linearity, OIP3=50 dBm, gain=13.5 dB gain and P 1dB=29 dBm while the device with source-via-hole ground and input impedance matched has the lowest linearity OIP3=40 dBm, 18.3 dB gain and P1dB=29 dBm.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages2063-2066
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
Country/TerritoryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • GaAs
  • Intermodulation
  • Linearity
  • MESFETs
  • Power amplifier

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