Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing

Dayanand Kumar; Aftab Saleem; Lai Boon Keong; Yeong Her Wang; Tseung Yuen Tseng

doi:10.1109/LED.2022.3172866

Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Yeong Her Wang, Tseung Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.

Original language	English
Pages (from-to)	1069-1072
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1109/LED.2022.3172866
State	Published - 1 Jul 2022

Keywords

Memristor
conductive filament
optoelectronic memory
photo sensing

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10.1109/LED.2022.3172866

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title = "Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing",

abstract = "In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.",

keywords = "Memristor, conductive filament, optoelectronic memory, photo sensing",

author = "Dayanand Kumar and Aftab Saleem and Keong, {Lai Boon} and Wang, {Yeong Her} and Tseng, {Tseung Yuen}",

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AU - Kumar, Dayanand

AU - Saleem, Aftab

AU - Keong, Lai Boon

AU - Wang, Yeong Her

AU - Tseng, Tseung Yuen

PY - 2022/7/1

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N2 - In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.

AB - In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.

KW - Memristor

KW - conductive filament

KW - optoelectronic memory

KW - photo sensing

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

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ER -

Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing

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Keywords

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