Light Induced RESET Phenomenon in Invisible Memristor for Photo Sensing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Yeong Her Wang, Tseung Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this letter, we present a novel invisible bilayer ZnSnOy/ZnSnOx memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (105 s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.

Original languageEnglish
Pages (from-to)1069-1072
Number of pages4
JournalIeee Electron Device Letters
Issue number7
StatePublished - 1 Jul 2022


  • conductive filament
  • Memristor
  • optoelectronic memory
  • photo sensing


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