Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen; Hsiu Wen Hsueh; Hsiao-Wen Zan; Chuang Chuang Tsai

doi:10.1149/1.3584088

Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen^*, Hsiu Wen Hsueh, Hsiao-Wen Zan, Chuang Chuang Tsai

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

Original language	English
Pages (from-to)	H297-H299
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1149/1.3584088
State	Published - 2011

Access to Document

10.1149/1.3584088

Cite this

@article{9131fdae28ea449883b03d15be3c091e,

title = "Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors",

abstract = "This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.",

author = "Chen, {Wei Tsung} and Hsueh, {Hsiu Wen} and Hsiao-Wen Zan and Tsai, {Chuang Chuang}",

year = "2011",

doi = "10.1149/1.3584088",

language = "English",

volume = "14",

pages = "H297--H299",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "7",

}

TY - JOUR

T1 - Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

AU - Chen, Wei Tsung

AU - Hsueh, Hsiu Wen

AU - Zan, Hsiao-Wen

AU - Tsai, Chuang Chuang

PY - 2011

Y1 - 2011

N2 - This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

AB - This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

UR - http://www.scopus.com/inward/record.url?scp=79959570806&partnerID=8YFLogxK

U2 - 10.1149/1.3584088

DO - 10.1149/1.3584088

M3 - Article

AN - SCOPUS:79959570806

SN - 1099-0062

VL - 14

SP - H297-H299

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this