Light Emission Near 1.3 μm Using ITO-Al 2 O 3 -Si 0.3 Ge 0.7 -Si Tunnel Diodes

C. Y. Lin; Albert Chin; Y. T. Hou; M. F. Li; S. P. McAlister; D. L. Kwong

doi:10.1109/LPT.2003.818922

Light Emission Near 1.3 μm Using ITO-Al ₂ O ₃ -Si _0.3 Ge _0.7 -Si Tunnel Diodes

C. Y. Lin^*, Albert Chin, Y. T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have fabricated Sn:In ₂ O ₃ (ITO)-Al ₂ O ₃ dielectric on Si _1-x Ge _x -Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

Original language	English
Pages (from-to)	36-38
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2003.818922
State	Published - 1 Jan 2004

Keywords

Al O
Electroluminescence
Light
Light-emitting device (LED)
SiGe

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10.1109/LPT.2003.818922

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title = "Light Emission Near 1.3 μm Using ITO-Al 2 O 3 -Si 0.3 Ge 0.7 -Si Tunnel Diodes",

abstract = " We have fabricated Sn:In 2 O 3 (ITO)-Al 2 O 3 dielectric on Si 1-x Ge x -Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency. ",

keywords = "Al O, Electroluminescence, Light, Light-emitting device (LED), SiGe",

author = "Lin, {C. Y.} and Albert Chin and Hou, {Y. T.} and Li, {M. F.} and McAlister, {S. P.} and Kwong, {D. L.}",

year = "2004",

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doi = "10.1109/LPT.2003.818922",

language = "English",

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TY - JOUR

T1 - Light Emission Near 1.3 μm Using ITO-Al 2 O 3 -Si 0.3 Ge 0.7 -Si Tunnel Diodes

AU - Lin, C. Y.

AU - Chin, Albert

AU - Hou, Y. T.

AU - Li, M. F.

AU - McAlister, S. P.

AU - Kwong, D. L.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We have fabricated Sn:In 2 O 3 (ITO)-Al 2 O 3 dielectric on Si 1-x Ge x -Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

AB - We have fabricated Sn:In 2 O 3 (ITO)-Al 2 O 3 dielectric on Si 1-x Ge x -Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

KW - Al O

KW - Electroluminescence

KW - Light

KW - Light-emitting device (LED)

KW - SiGe

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DO - 10.1109/LPT.2003.818922

M3 - Article

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EP - 38

JO - IEEE Photonics Technology Letters

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Light Emission Near 1.3 μm Using ITO-Al ₂ O ₃ -Si _0.3 Ge _0.7 -Si Tunnel Diodes

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Keywords

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