Light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes

C. Y. Lin; L. H. Lai; A. Chin; Y. T. Hou; M. F. Li; S. P. McAlister

doi:10.1109/DRC.2003.1226867

Light emission from Al₂O₃/Si_1-xGe_x/Si MOS tunnel diodes

C. Y. Lin, L. H. Lai, A. Chin, Y. T. Hou, M. F. Li, S. P. McAlister

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Light emission at ∼1.3 μm was measured at room temperature in Al₂O₃/Si_1-xGe_x MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy <E_g of Si.

Original language	English
Title of host publication	61st Device Research Conference, DRC 2003 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	51-52
Number of pages	2
ISBN (Electronic)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226867
State	Published - 1 Jan 2003
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 23 Jun 2003 → 25 Jun 2003

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2003-January
ISSN (Print)	1548-3770

Conference

Conference	61st Device Research Conference, DRC 2003
Country/Territory	United States
City	Salt Lake City
Period	23/06/03 → 25/06/03

Keywords

Dielectric substrates
Diodes
Energy measurement
Germanium silicon alloys
Indium tin oxide
Low voltage
MOSFET circuits
Quantization
Silicon germanium
Wavelength measurement

Access to Document

10.1109/DRC.2003.1226867

Cite this

Lin, C. Y., Lai, L. H., Chin, A., Hou, Y. T., Li, M. F., & McAlister, S. P. (2003). Light emission from Al₂O₃/Si_1-xGe_x/Si MOS tunnel diodes. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 51-52). Article 1226867 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226867

@inproceedings{3df43d5e324f4bf3a531ebebc73a875b,

title = "Light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes",

abstract = "Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy g of Si.",

keywords = "Dielectric substrates, Diodes, Energy measurement, Germanium silicon alloys, Indium tin oxide, Low voltage, MOSFET circuits, Quantization, Silicon germanium, Wavelength measurement",

author = "Lin, {C. Y.} and Lai, {L. H.} and A. Chin and Hou, {Y. T.} and Li, {M. F.} and McAlister, {S. P.}",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/DRC.2003.1226867",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "51--52",

booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",

address = "美國",

note = "61st Device Research Conference, DRC 2003 ; Conference date: 23-06-2003 Through 25-06-2003",

}

Lin, CY, Lai, LH, Chin, A, Hou, YT, Li, MF & McAlister, SP 2003, Light emission from Al₂O₃/Si_1-xGe_x/Si MOS tunnel diodes. in 61st Device Research Conference, DRC 2003 - Conference Digest., 1226867, Device Research Conference - Conference Digest, DRC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 51-52, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 23/06/03. https://doi.org/10.1109/DRC.2003.1226867

Light emission from Al₂O₃/Si_1-xGe_x/Si MOS tunnel diodes. / Lin, C. Y.; Lai, L. H.; Chin, A. et al.
61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2003. p. 51-52 1226867 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes

AU - Lin, C. Y.

AU - Lai, L. H.

AU - Chin, A.

AU - Hou, Y. T.

AU - Li, M. F.

AU - McAlister, S. P.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy g of Si.

AB - Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy g of Si.

KW - Dielectric substrates

KW - Diodes

KW - Energy measurement

KW - Germanium silicon alloys

KW - Indium tin oxide

KW - Low voltage

KW - MOSFET circuits

KW - Quantization

KW - Silicon germanium

KW - Wavelength measurement

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DO - 10.1109/DRC.2003.1226867

M3 - Conference contribution

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T3 - Device Research Conference - Conference Digest, DRC

SP - 51

EP - 52

BT - 61st Device Research Conference, DRC 2003 - Conference Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st Device Research Conference, DRC 2003

Y2 - 23 June 2003 through 25 June 2003

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