LED materials: Epitaxy and quantum well structures

Zhen Yu Li; Hao Chung Kuo; Chen Yu Shieh; Ching Hsueh Chiu; Po Min Tu; Wu Yih Uen

doi:10.1007/978-3-319-00176-0_10

LED materials: Epitaxy and quantum well structures

Zhen Yu Li^*, Hao Chung Kuo, Chen Yu Shieh, Ching Hsueh Chiu, Po Min Tu, Wu Yih Uen

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

Original language	English
Title of host publication	Handbook of Advanced Lighting Technology
Publisher	Springer International Publishing
Pages	73-121
Number of pages	49
ISBN (Electronic)	9783319001760
ISBN (Print)	9783319001753
DOIs	https://doi.org/10.1007/978-3-319-00176-0_10
State	Published - 1 Jan 2017

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10.1007/978-3-319-00176-0_10

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title = "LED materials: Epitaxy and quantum well structures",

abstract = "This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.",

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AU - Li, Zhen Yu

AU - Kuo, Hao Chung

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AU - Tu, Po Min

AU - Uen, Wu Yih

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N2 - This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

AB - This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

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LED materials: Epitaxy and quantum well structures

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