Layout-dependent effects on high frequency performance and noise of sub-40nm multi-finger n-channel and p-channel MOSFETs

Kuo Liang Yeh*, Chih Shiang Chang, Jyh-Chyurn Guo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations

    Abstract

    Layout dependent effects on high frequency performance parameters like f T , f MAX , and RF noise in sub-40nm multi-finger MOSFETs is investigated in this paper. Narrow-OD MOSFET with smaller finger width and larger finger number can achieve lower R g and higher f MAX . However, these narrow-OD devices suffer f T degradation and higher noise figure, even with the advantage of lower R g . The mechanisms responsible for the trade-off between different parameters will be presented to provide an important guideline of device layout for RF circuits design using nanoscale CMOS technology.

    Original languageEnglish
    Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
    DOIs
    StatePublished - 3 Oct 2012
    Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
    Duration: 17 Jun 201222 Jun 2012

    Publication series

    NameIEEE MTT-S International Microwave Symposium Digest
    ISSN (Print)0149-645X

    Conference

    Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
    Country/TerritoryCanada
    CityMontreal, QC
    Period17/06/1222/06/12

    Keywords

    • F
    • F
    • High frequency
    • Layout
    • Multi-finger MOSFET
    • Nanoscale CMOS
    • Noise

    Fingerprint

    Dive into the research topics of 'Layout-dependent effects on high frequency performance and noise of sub-40nm multi-finger n-channel and p-channel MOSFETs'. Together they form a unique fingerprint.

    Cite this