Layer-aware design partitioning for vertical interconnect minimization

Ya Shih Huang*, Yang Hsiang Liu, Juinn-Dar Huang

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Scopus citations

    Abstract

    Three-dimensional (3D) design technology, which has potential to significantly improve design performance and ease heterogeneous system integration, has been extensively discussed in recent years. This emerging technology allows stacking multiple layers of dies and typically resolves the vertical inter-layer connection issue by through-silicon vias (TSVs). However, TSVs also occupy significant silicon estate as well as incur reliability problems. Therefore, the deployment of TSVs must be very judicious in 3D designs. In this paper, we propose an iterative layer-aware partitioning algorithm, named iLap, for TSV minimization in 3D structures. iLap iteratively applies multi-way min-cut partitioning to gradually divide a given design layer by layer in the bottom-up fashion. Meanwhile, iLap also properly fulfills a specific I/O pad constraint incurred by 3D structures to further improve its outcome. Experimental results show that iLap can reduce the number of TSVs by about 35% as compared to several existing state-of-the-art methods. We believe a good TSV-minimized 3D partitioning solution can serve as a good starting point for further tradeoff operations between TSV count and wirelength.

    Original languageEnglish
    Title of host publicationProceedings - 2011 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011
    Pages144-149
    Number of pages6
    DOIs
    StatePublished - 14 Sep 2011
    Event2011 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011 - Chennai, India
    Duration: 4 Jul 20116 Jul 2011

    Publication series

    NameProceedings - 2011 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011

    Conference

    Conference2011 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2011
    Country/TerritoryIndia
    CityChennai
    Period4/07/116/07/11

    Keywords

    • 3D integration technology
    • Layering
    • Partitioning
    • Through-silicon via (TSV)

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