Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Y. P. Hsu, S. J. Chang*, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, Cheng-Huang Kuo, C. S. Chang, S. C. Shei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations


GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire. Such an enhancement could be attributed to the reduced dislocation density in the lateral growth regions of the epitaxial layers.

Original languageEnglish
Pages (from-to)466-470
Number of pages5
JournalJournal of Crystal Growth
Issue number4
StatePublished - 1 Feb 2004


  • A1. Dislocation
  • A2. Lateral growth
  • A3. Multi quantum wells
  • B1. InGaN/GaN
  • B1. Pattern sapphire
  • B3. Light emitting diodes


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