Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

I. Cheng Lin; Chuan Jane Chao; Ming-Dou Ker; Jen Chou Tseng; Chung Ti Hsu; Len Yi Leu; Yu Lin Chen; Chia Ku Tsai; Ren Wen Huang

doi:10.1109/EOSESD.2004.5272617

Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

I. Cheng Lin^*, Chuan Jane Chao, Ming-Dou Ker, Jen Chou Tseng, Chung Ti Hsu, Len Yi Leu, Yu Lin Chen, Chia Ku Tsai, Ren Wen Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.

Original language	English
Title of host publication	2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
DOIs	https://doi.org/10.1109/EOSESD.2004.5272617
State	Published - 1 Dec 2004
Event	2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States Duration: 19 Sep 2004 → 23 Sep 2004

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)	0739-5159

Conference

Conference	2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
Country/Territory	United States
City	Grapevine, TX
Period	19/09/04 → 23/09/04

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10.1109/EOSESD.2004.5272617

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Lin, I. C., Chao, C. J., Ker, M-D., Tseng, J. C., Hsu, C. T., Leu, L. Y., Chen, Y. L., Tsai, C. K., & Huang, R. W. (2004). Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product. In 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 [5272617] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings). https://doi.org/10.1109/EOSESD.2004.5272617

@inproceedings{c4b4e01e5d844b8ca305e7134d80a6c1,

title = "Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product",

abstract = "An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.",

author = "Lin, {I. Cheng} and Chao, {Chuan Jane} and Ming-Dou Ker and Tseng, {Jen Chou} and Hsu, {Chung Ti} and Leu, {Len Yi} and Chen, {Yu Lin} and Tsai, {Chia Ku} and Huang, {Ren Wen}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/EOSESD.2004.5272617",

language = "English",

isbn = "1585370630",

series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

booktitle = "2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04",

note = "2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 ; Conference date: 19-09-2004 Through 23-09-2004",

}

Lin, IC, Chao, CJ, Ker, M-D, Tseng, JC, Hsu, CT, Leu, LY, Chen, YL, Tsai, CK & Huang, RW 2004, Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product. in 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04., 5272617, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04, Grapevine, TX, United States, 19/09/04. https://doi.org/10.1109/EOSESD.2004.5272617

Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product. / Lin, I. Cheng; Chao, Chuan Jane; Ker, Ming-Dou et al.
2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04. 2004. 5272617 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

AU - Lin, I. Cheng

AU - Chao, Chuan Jane

AU - Ker, Ming-Dou

AU - Tseng, Jen Chou

AU - Hsu, Chung Ti

AU - Leu, Len Yi

AU - Chen, Yu Lin

AU - Tsai, Chia Ku

AU - Huang, Ren Wen

PY - 2004/12/1

Y1 - 2004/12/1

N2 - An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.

AB - An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.

UR - http://www.scopus.com/inward/record.url?scp=77950847354&partnerID=8YFLogxK

U2 - 10.1109/EOSESD.2004.5272617

DO - 10.1109/EOSESD.2004.5272617

M3 - Conference contribution

AN - SCOPUS:77950847354

SN - 1585370630

SN - 9781585370634

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

BT - 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04

T2 - 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04

Y2 - 19 September 2004 through 23 September 2004

ER -

Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

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