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Latchup Risk in a 4H-SiC Process
Chao Yang Ke,
Ming Dou Ker
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Corresponding author for this work
Institute of Electronics
Center for Neuromodulation Medical Electronics Systems
Research output
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peer-review
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Keyphrases
Latch-up
100%
4H-SiC
100%
Holding Voltage
57%
Transmission Line Pulse
28%
Temperature Rise
14%
Pulse Width
14%
Design Rules
14%
Self-heating Effect
14%
Process Solutions
14%
Layout Solution
14%
Pulse System
14%
Voltage Rating
14%
Engineering
Holding Voltage
100%
Electric Lines
50%
Temperature Increase
25%
Design Rule
25%
Heating Effect
25%
Process Solution
25%