Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

Zi Hong Jiang; Ming Dou Ker

doi:10.1109/TEMC.2022.3202806

Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

Zi Hong Jiang, Ming Dou Ker

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-<italic>μ</italic>m 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	IEEE Transactions on Electromagnetic Compatibility
DOIs	https://doi.org/10.1109/TEMC.2022.3202806
State	Accepted/In press - 2022

Keywords

Detectors
Digital audio players
I/O pad
Integrated circuits
Inverters
latch-up
latch-up prevention
Logic gates
low dropout regulator (LDO)
Power supplies
Ring oscillators
silicon-controlled rectifier (SCR)

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10.1109/TEMC.2022.3202806

Cite this

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title = "Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits",

abstract = "Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-μm 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.",

keywords = "Detectors, Digital audio players, I/O pad, Integrated circuits, Inverters, latch-up, latch-up prevention, Logic gates, low dropout regulator (LDO), Power supplies, Ring oscillators, silicon-controlled rectifier (SCR)",

author = "Jiang, {Zi Hong} and Ker, {Ming Dou}",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/TEMC.2022.3202806",

language = "English",

pages = "1--8",

journal = "IEEE Transactions on Electromagnetic Compatibility",

issn = "0018-9375",

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T1 - Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

AU - Jiang, Zi Hong

AU - Ker, Ming Dou

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PY - 2022

Y1 - 2022

N2 - Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-μm 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.

AB - Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-μm 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.

KW - Detectors

KW - Digital audio players

KW - I/O pad

KW - Integrated circuits

KW - Inverters

KW - latch-up

KW - latch-up prevention

KW - Logic gates

KW - low dropout regulator (LDO)

KW - Power supplies

KW - Ring oscillators

KW - silicon-controlled rectifier (SCR)

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JO - IEEE Transactions on Electromagnetic Compatibility

JF - IEEE Transactions on Electromagnetic Compatibility

ER -

Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

Abstract

Keywords

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