Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

Kung Shu Hsu; Wei Chun Hung; Chih Chi Chang; Wei Hsun Lin; Min Hsiung Shih; Po-Tsung Lee; Shih Yen Lin; Shu Wei Chang; Yia Chung Chang

doi:10.1063/1.4929948

Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

Kung Shu Hsu, Wei Chun Hung, Chih Chi Chang, Wei Hsun Lin, Min Hsiung Shih, Po-Tsung Lee, Shih Yen Lin, Shu Wei Chang, Yia Chung Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

Original language	English
Article number	091113
Journal	Applied Physics Letters
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.4929948
State	Published - 21 Aug 2015

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title = "Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity",

abstract = "We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.",

author = "Hsu, {Kung Shu} and Hung, {Wei Chun} and Chang, {Chih Chi} and Lin, {Wei Hsun} and Shih, {Min Hsiung} and Po-Tsung Lee and Lin, {Shih Yen} and Chang, {Shu Wei} and Chang, {Yia Chung}",

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doi = "10.1063/1.4929948",

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T1 - Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

AU - Hsu, Kung Shu

AU - Hung, Wei Chun

AU - Chang, Chih Chi

AU - Lin, Wei Hsun

AU - Shih, Min Hsiung

AU - Lee, Po-Tsung

AU - Lin, Shih Yen

AU - Chang, Shu Wei

AU - Chang, Yia Chung

PY - 2015/8/21

Y1 - 2015/8/21

N2 - We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

AB - We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

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DO - 10.1063/1.4929948

M3 - Article

AN - SCOPUS:84940977655

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091113

ER -

Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

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