Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Tai Min Chang; Hsin Kai Fang; Cheng Liao; Wen Yang Hsu; Yew-Chuhg Wu

doi:10.1149/2.0101502jss

Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Tai Min Chang, Hsin Kai Fang, Cheng Liao, Wen Yang Hsu, Yew-Chuhg Wu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

Original language	English
Pages (from-to)	R20-R22
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	2
DOIs	https://doi.org/10.1149/2.0101502jss
State	Published - 1 Jan 2015

Access to Document

10.1149/2.0101502jss

Cite this

@article{9b46babba9354b929fa9dddd56858986,

title = "Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate",

abstract = "Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.",

author = "Chang, {Tai Min} and Fang, {Hsin Kai} and Cheng Liao and Hsu, {Wen Yang} and Yew-Chuhg Wu",

year = "2015",

month = jan,

day = "1",

doi = "10.1149/2.0101502jss",

language = "English",

volume = "4",

pages = "R20--R22",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

AU - Chang, Tai Min

AU - Fang, Hsin Kai

AU - Liao, Cheng

AU - Hsu, Wen Yang

AU - Wu, Yew-Chuhg

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

AB - Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

UR - http://www.scopus.com/inward/record.url?scp=84923647406&partnerID=8YFLogxK

U2 - 10.1149/2.0101502jss

DO - 10.1149/2.0101502jss

M3 - Article

AN - SCOPUS:84923647406

SN - 2162-8769

VL - 4

SP - R20-R22

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

ER -

Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this