Laser and mass spectrometric studies of the mechanism of silicon (100) single crystal etching reactions

J. S. Horwitz; Ming-Chang Lin

Laser and mass spectrometric studies of the mechanism of silicon (100) single crystal etching reactions

J. S. Horwitz^*, Ming-Chang Lin

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The thermal etching of Si(100) single crystals by F₂ has been studied by electron impact (EI) and resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Laser ionization of the gas phase products observed under single collision gas-surface conditions indicates that SiF₂ radicals are formed with an apparent activation energy of 9.9 ± 1.65 kcal/mol. Similarly, EI measurements indicate that SiF₄ is desorbed from the surface with an apparent activation energy of 4.0 ± 1.0 kcal/mol. A comparison of the temperature dependence of the ion currents generated by EI for SiF_x⁺, (x = (1-4)) with MPI of SiF₂ indicate that the SiF_x⁺ signals are derived primarily from SiF₂ and SiF₄ (possibly vibrationally excited). Both n-type and p-type doping apparently have no significant effect in the measured rates and activation energies for SiF₂ and SiF₄ production.

Original language	English
Pages (from-to)	265-278
Number of pages	14
Journal	High temperature science
Volume	27
Issue number	pt 2
State	Published - 1988
Event	Proceedings of the Sixth International Conference on High Temperatures - Chemistry of Inorganic Materials - Gaithersburg, MD, USA Duration: 3 Apr 1989 → 7 Apr 1989

Cite this

@article{b2b200e5b0be4ffea42aea91c74c1ce3,

title = "Laser and mass spectrometric studies of the mechanism of silicon (100) single crystal etching reactions",

abstract = "The thermal etching of Si(100) single crystals by F2 has been studied by electron impact (EI) and resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Laser ionization of the gas phase products observed under single collision gas-surface conditions indicates that SiF2 radicals are formed with an apparent activation energy of 9.9 ± 1.65 kcal/mol. Similarly, EI measurements indicate that SiF4 is desorbed from the surface with an apparent activation energy of 4.0 ± 1.0 kcal/mol. A comparison of the temperature dependence of the ion currents generated by EI for SiFx+, (x = (1-4)) with MPI of SiF2 indicate that the SiFx+ signals are derived primarily from SiF2 and SiF4 (possibly vibrationally excited). Both n-type and p-type doping apparently have no significant effect in the measured rates and activation energies for SiF2 and SiF4 production.",

author = "Horwitz, {J. S.} and Ming-Chang Lin",

year = "1988",

language = "English",

volume = "27",

pages = "265--278",

journal = "High temperature science",

issn = "0018-1536",

number = "pt 2",

note = "Proceedings of the Sixth International Conference on High Temperatures - Chemistry of Inorganic Materials ; Conference date: 03-04-1989 Through 07-04-1989",

}

TY - JOUR

T1 - Laser and mass spectrometric studies of the mechanism of silicon (100) single crystal etching reactions

AU - Horwitz, J. S.

AU - Lin, Ming-Chang

PY - 1988

Y1 - 1988

N2 - The thermal etching of Si(100) single crystals by F2 has been studied by electron impact (EI) and resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Laser ionization of the gas phase products observed under single collision gas-surface conditions indicates that SiF2 radicals are formed with an apparent activation energy of 9.9 ± 1.65 kcal/mol. Similarly, EI measurements indicate that SiF4 is desorbed from the surface with an apparent activation energy of 4.0 ± 1.0 kcal/mol. A comparison of the temperature dependence of the ion currents generated by EI for SiFx+, (x = (1-4)) with MPI of SiF2 indicate that the SiFx+ signals are derived primarily from SiF2 and SiF4 (possibly vibrationally excited). Both n-type and p-type doping apparently have no significant effect in the measured rates and activation energies for SiF2 and SiF4 production.

AB - The thermal etching of Si(100) single crystals by F2 has been studied by electron impact (EI) and resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Laser ionization of the gas phase products observed under single collision gas-surface conditions indicates that SiF2 radicals are formed with an apparent activation energy of 9.9 ± 1.65 kcal/mol. Similarly, EI measurements indicate that SiF4 is desorbed from the surface with an apparent activation energy of 4.0 ± 1.0 kcal/mol. A comparison of the temperature dependence of the ion currents generated by EI for SiFx+, (x = (1-4)) with MPI of SiF2 indicate that the SiFx+ signals are derived primarily from SiF2 and SiF4 (possibly vibrationally excited). Both n-type and p-type doping apparently have no significant effect in the measured rates and activation energies for SiF2 and SiF4 production.

UR - http://www.scopus.com/inward/record.url?scp=0024185199&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024185199

SN - 0018-1536

VL - 27

SP - 265

EP - 278

JO - High temperature science

JF - High temperature science

IS - pt 2

T2 - Proceedings of the Sixth International Conference on High Temperatures - Chemistry of Inorganic Materials

Y2 - 3 April 1989 through 7 April 1989

ER -

Laser and mass spectrometric studies of the mechanism of silicon (100) single crystal etching reactions

Abstract

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