Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin; Shiang Yu Tsai; Li Wei Chu; Ming-Dou Ker

doi:10.1109/TMTT.2012.2231426

Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin^*, Shiang Yu Tsai, Li Wei Chu, Ming-Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

Original language	English
Article number	6381493
Pages (from-to)	914-921
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	61
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2012.2231426
State	Published - 1 Jan 2013

Keywords

Electrostatic discharge (ESD)
power amplifier (PA)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

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10.1109/TMTT.2012.2231426

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title = "Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process",

abstract = "The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.",

keywords = "Electrostatic discharge (ESD), power amplifier (PA), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Tsai, {Shiang Yu} and Chu, {Li Wei} and Ming-Dou Ker",

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AU - Ker, Ming-Dou

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AB - The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

KW - Electrostatic discharge (ESD)

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KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

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Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

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Keywords

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