Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system

M. T. Hung*, C. C. Wang, J. C. Hsu, J. Y. Chiou, S. W. Lee, T. M. Hsu, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Thermal conductivity (k(T)) of Ge quantum dots (QDs) embedded in SiO 2 was investigated at T = 100-400 K. The Ge QD/SiO2 system appears to have much lower k(T) than their counterparts of bulk Ge and SiO 2, and the reduction factor increases with the surface-to-volume ratio of the QD in SiO2. Attendant to reduced magnitude includes delayed Umklapp decline and weaker dependence on temperature for k(T). Effective medium analysis suggests the reduction in k primarily comes from the decreased group velocity thanks to the QD inclusion that induces interfacial stress on SiO2, phonon confinement, and boundary scatterings.

Original languageEnglish
Article number251913
JournalApplied Physics Letters
Volume101
Issue number25
DOIs
StatePublished - 17 Dec 2012

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