Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

K. T. Chan; C. H. Huang; Albert Chin; M. F. Li; Dim Lee Kwong; S. P. McAlister; D. S. Duh; W. J. Lin

doi:10.1109/LMWC.2003.819383

Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

K. T. Chan^*, C. H. Huang, Albert Chin, M. F. Li, Dim Lee Kwong, S. P. McAlister, D. S. Duh, W. J. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.

Original language	English
Pages (from-to)	460-462
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	13
Issue number	11
DOIs	https://doi.org/10.1109/LMWC.2003.819383
State	Published - Nov 2003

Keywords

Implantation
Inductor
Q-factor
RF

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title = "Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation",

abstract = "We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.",

keywords = "Implantation, Inductor, Q-factor, RF",

author = "Chan, {K. T.} and Huang, {C. H.} and Albert Chin and Li, {M. F.} and Kwong, {Dim Lee} and McAlister, {S. P.} and Duh, {D. S.} and Lin, {W. J.}",

year = "2003",

month = nov,

doi = "10.1109/LMWC.2003.819383",

language = "English",

volume = "13",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

AU - Chan, K. T.

AU - Huang, C. H.

AU - Chin, Albert

AU - Li, M. F.

AU - Kwong, Dim Lee

AU - McAlister, S. P.

AU - Duh, D. S.

AU - Lin, W. J.

PY - 2003/11

Y1 - 2003/11

N2 - We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.

AB - We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.

KW - Implantation

KW - Inductor

KW - Q-factor

KW - RF

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U2 - 10.1109/LMWC.2003.819383

DO - 10.1109/LMWC.2003.819383

M3 - Article

AN - SCOPUS:0242612022

SN - 1531-1309

VL - 13

SP - 460

EP - 462

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 11

ER -

Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

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Keywords

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